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to ? 92m 1. collector 2. base 3. emitter to ? 92m od 1. emitter 2. collector 3. base to-92mod plastic-encapsulate transistors 2SA1160 transistor (pnp) features z high dc current gain and excellent h fe linearity z low saturation voltage maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = -1ma,i e =0 -20 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -10 v emitter-base breakdown voltage v (br)ebo i e =-1ma,i c =0 -6 v collector cut-off current i cbo v cb =-20v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-6v,i c =0 -0.1 a h fe(1) v ce =-1v, i c =-0.5a 140 600 dc current gain h fe(2) v ce =-1v, i c =-4a 60 collector-emitter saturation voltage v ce(sat) i c =-2a,i b =-0.05a -0.5 v base-emitter voltage v be v ce =-1v, i c =-2a -1.5 v collector output capacitance c ob v cb =-10v,i e =0, f=1mhz 50 pf transition frequency f t v ce =-1v,i c =-0.5a 140 mhz classification of h fe(1) rank a b c range 140-280 200-400 300-600 symbol parameter value unit v cbo collector-base voltage -20 v v ceo collector-emitter voltage -10 v v ebo emitter-base voltage -6 v i c collector current -2 a p c collector power dissipation 900 mw r ja thermal resistance from junction to ambient 139 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification

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